diff options
| -rw-r--r-- | ports/stm32/flash.c | 34 | ||||
| -rw-r--r-- | ports/stm32/flashbdev.c | 8 |
2 files changed, 41 insertions, 1 deletions
diff --git a/ports/stm32/flash.c b/ports/stm32/flash.c index 10e1d2eff..4042785fa 100644 --- a/ports/stm32/flash.c +++ b/ports/stm32/flash.c @@ -68,15 +68,25 @@ static const flash_layout_t flash_layout[] = { { (uint32_t)FLASH_BASE, (uint32_t)FLASH_PAGE_SIZE, 512 }, }; +#elif defined(STM32H7) + +static const flash_layout_t flash_layout[] = { + { 0x08000000, 0x20000, 8 }, +}; + #else #error Unsupported processor #endif -#if defined(MCU_SERIES_L4) +#if defined(MCU_SERIES_L4) || defined(STM32H7) // get the bank of a given flash address static uint32_t get_bank(uint32_t addr) { + #if defined(STM32H7) + if (READ_BIT(FLASH->OPTCR, FLASH_OPTCR_SWAP_BANK) == 0) { + #else if (READ_BIT(SYSCFG->MEMRMP, SYSCFG_MEMRMP_FB_MODE) == 0) { + #endif // no bank swap if (addr < (FLASH_BASE + FLASH_BANK_SIZE)) { return FLASH_BANK_1; @@ -93,6 +103,7 @@ static uint32_t get_bank(uint32_t addr) { } } +#if defined(MCU_SERIES_L4) // get the page of a given flash address static uint32_t get_page(uint32_t addr) { if (addr < (FLASH_BASE + FLASH_BANK_SIZE)) { @@ -103,6 +114,7 @@ static uint32_t get_page(uint32_t addr) { return (addr - (FLASH_BASE + FLASH_BANK_SIZE)) / FLASH_PAGE_SIZE; } } +#endif #endif @@ -153,12 +165,19 @@ void flash_erase(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) EraseInitStruct.NbPages = get_page(flash_dest + 4 * num_word32 - 1) - EraseInitStruct.Page + 1;; #else // Clear pending flags (if any) + #if defined(STM32H7) + __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_ALL_ERRORS_BANK1 | FLASH_FLAG_ALL_ERRORS_BANK2); + #else __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR); + #endif // erase the sector(s) EraseInitStruct.TypeErase = TYPEERASE_SECTORS; EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V + #if defined(STM32H7) + EraseInitStruct.Banks = get_bank(flash_dest); + #endif EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL); EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1; #endif @@ -224,6 +243,19 @@ void flash_write(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) } } + #elif defined(STM32H7) + + // program the flash 256 bits at a time + for (int i = 0; i < num_word32 / 8; i++) { + if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_FLASHWORD, flash_dest, (uint64_t)(uint32_t)src) != HAL_OK) { + // error occurred during flash write + HAL_FLASH_Lock(); // lock the flash + return; + } + flash_dest += 32; + src += 8; + } + #else // program the flash word by word diff --git a/ports/stm32/flashbdev.c b/ports/stm32/flashbdev.c index 49fe5c696..ec2e4f212 100644 --- a/ports/stm32/flashbdev.c +++ b/ports/stm32/flashbdev.c @@ -85,6 +85,14 @@ STATIC byte flash_cache_mem[0x4000] __attribute__((aligned(4))); // 16k #define FLASH_MEM_SEG1_START_ADDR (0x08008000) // sector 1 #define FLASH_MEM_SEG1_NUM_BLOCKS (192) // sectors 1,2,3: 32k+32k+32=96k +#elif defined(STM32H743xx) + +// The STM32H743 flash sectors are 128K +#define CACHE_MEM_START_ADDR (0x20000000) // DTCM data RAM, 128k +#define FLASH_SECTOR_SIZE_MAX (0x20000) // 128k max +#define FLASH_MEM_SEG1_START_ADDR (0x08020000) // sector 1 +#define FLASH_MEM_SEG1_NUM_BLOCKS (256) // Sector 1: 128k / 512b = 256 blocks + #elif defined(STM32L475xx) || defined(STM32L476xx) extern uint8_t _flash_fs_start; |